IRFS7440PBF

new-10%

Manufacturer part number:IRFS7440PBF

Manufacturer:Infineon Technologies

Description:Transistor MOSFET N-ch 40V 120A D2PAK

Case Package:SOT-23

Datasheet:IRFS7440PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Series	HEXFET®, StrongIRFET™
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	208W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	208W
Case Connection	DRAIN
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	4730pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	135nC @ 10V
Rise Time	68ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	68 ns
Turn-Off Delay Time	115 ns
Continuous Drain Current (ID)	120A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	208A
Drain-source On Resistance-Max	0.0025Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	772A
Recovery Time	24 ns
Nominal Vgs	3 V
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free