IRF6898MTRPBF

new-10%

Manufacturer part number:IRF6898MTRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 35A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6898MTRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	HEXFET®
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 78W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	78W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.1m Ω @ 35A, 10V
Vgs(th) (Max) @ Id	2.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	5435pF @ 13V
Current - Continuous Drain (Id) @ 25°C	35A Ta 213A Tc
Gate Charge (Qg) (Max) @ Vgs	62nC @ 4.5V
Rise Time	46ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	35A
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	280A
FET Feature	Schottky Diode (Body)
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free