SI4646DY-T1-GE3

new-10%

Manufacturer part number:SI4646DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 12A 6.25W 11.5mohm @ 10V

Case Package:SOT-23

Datasheet:SI4646DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	186.993455mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	SkyFET®, TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	3W Ta 6.25W Tc
Turn On Delay Time	23 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	11.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1790pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	13ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	1.79nF
Drain to Source Resistance	11.5mOhm
Rds On Max	11.5 mΩ
Height	1.55mm
Length	5mm
Width	4mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant