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IRFU3303PBF

IRFU3303PBF

IRFU3303PBF

Infineon Technologies

MOSFET N-CH 30V 33A I-PAK

SOT-23

IRFU3303PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Supplier Device Package IPAK (TO-251)
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 33A
Power Dissipation-Max 57W Tc
Element Configuration Single
Power Dissipation 57W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 31mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 99ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 750pF
Drain to Source Resistance 31mOhm
Rds On Max 31 mΩ
Height 6.22mm
Length 6.7056mm
Width 2.3876mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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