STSJ100NHS3LL

new-10%

Manufacturer part number:STSJ100NHS3LL

Manufacturer:STMicroelectronics

Description:MOSFET N Ch 30V 0.0032Ohm 20A Pwr

Case Package:SOT-23

Datasheet:STSJ100NHS3LL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width) Exposed Pad
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ III
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Reach Compliance Code	unknown
Base Part Number	STSJ100N
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3W Ta 70W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.2m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 4.5V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	68 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	20A
Drain-source On Resistance-Max	0.0057Ohm
Drain to Source Breakdown Voltage	30V
RoHS Status	ROHS3 Compliant