SI5853CDC-T1-E3

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Manufacturer part number:SI5853CDC-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 4A 1206-8

Case Package:SOT-23

Datasheet:SI5853CDC-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	LITTLE FOOT®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	104mOhm
Terminal Finish	MATTE TIN
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.5W Ta 3.1W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	5 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	104m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 8V
Rise Time	15ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	-4A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	4A
DS Breakdown Voltage-Min	20V
FET Feature	Schottky Diode (Isolated)
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free