NTD12N10T4G

new-10%

Manufacturer part number:NTD12N10T4G

Manufacturer:ON Semiconductor

Description:NTD12N10T4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTD12N10T4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	12A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.28W Ta 56.6W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	56.6W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	165m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	75 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free