IRFZ34NLPBF

new-10%

Manufacturer part number:IRFZ34NLPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 29A TO-262

Case Package:SOT-23

Datasheet:IRFZ34NLPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Supplier Device Package	TO-262
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1997
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	40mOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Current Rating	29A
Number of Elements	1
Power Dissipation-Max	3.8W Ta 68W Tc
Power Dissipation	68W
Turn On Delay Time	7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	40mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	29A Tc
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Rise Time	49ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	31 ns
Continuous Drain Current (ID)	29A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Input Capacitance	700pF
Drain to Source Resistance	40mOhm
Rds On Max	40 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free