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IRG4BC10SD-S

  • IRG4BC10SD-S
  • IRG4BC10SD-S

IRG4BC10SD-S

IRG4BC10SD-S

Infineon Technologies

IRG4BC10SD-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC10SD-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN LEAD
Additional Feature LOW CONDUCTION LOSS
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 225
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 38W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 28ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 14A
Turn On Time 106 ns
Test Condition 480V, 8A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 8A
Turn Off Time-Nom (toff) 1780 ns
Gate Charge 15nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 76ns/815ns
Switching Energy 310μJ (on), 3.28mJ (off)
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $3.58160 $179.08
IRG4BC10SD-S Product Details

IRG4BC10SD-S Description


IRG4BC10SD-S is a 600V insulated gate bipolar transistor with an ultrafast soft recovery diode.  It is applied to many fields, like Automotive Advanced driver assistance systems (ADAS) Enterprise systems Datacenter & enterprise computing Personal electronics Home theater & entertainment. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC10SD-S is in the TO‐220AB package with 38W power dissipation.



IRG4BC10SD-S Features


Extremely low voltage drop 1.1Vtyp. @ 2A

S-Series: Minimizes power dissipation at up to 3KHz PWM frequency in inverter drives, and up to 4 kHz in brushless DC drives.

Very Tight Vce(on) distribution

IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Industry-standard TO-220AB package



IRG4BC10SD-S Applications


Automotive 

Advanced driver assistance systems (ADAS) 

Enterprise systems 

Datacenter & enterprise computing 

Personal electronics 

Home theater & entertainment


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