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IRG4RC20FTRL

IRG4RC20FTRL

IRG4RC20FTRL

Infineon Technologies

IRG4RC20FTRL datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4RC20FTRL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IRG4RC20F
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Input Type Standard
Power - Max 66W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-252AA
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 22A
Turn On Time 51 ns
Test Condition 480V, 12A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Turn Off Time-Nom (toff) 706 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 44A
Td (on/off) @ 25°C 26ns/194ns
Switching Energy 190μJ (on), 920μJ (off)
RoHS Status Non-RoHS Compliant
IRG4RC20FTRL Product Details

IRG4RC20FTRL  Benefits

Generation 4 IGBTs offer the highest efficiency

Optimized for specific application conditions

High power density and current rating



IRG4RC20FTRL  Features

Fast: Optimized for medium operating

 frequencies (1-5 kHz in hard switching, >20

 kHz in resonant mode).

Generation 4 IGBT design provides tighter

 parameter distribution and higher efficiency than

 previous generation IGBTs.

Industry-standard TO-252AA package

Combines very low VCE(on) with low switching

 losses



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