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IRGP35B60PD-EP

  • IRGP35B60PD-EP
  • IRGP35B60PD-EP

IRGP35B60PD-EP

IRGP35B60PD-EP

Infineon Technologies

IRGP35B60PD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP35B60PD-EP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Reach Compliance Code compliant
Input Type Standard
Power - Max 308W
Reverse Recovery Time 42ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 60A
Test Condition 390V, 22A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 35A
IGBT Type NPT
Gate Charge 160nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 26ns/110ns
Switching Energy 220μJ (on), 215μJ (off)
RoHS Status RoHS Compliant
IRGP35B60PD-EP Product Details

IRGP35B60PD-EP Description


The IRGP35B60PD-EP  is a warp2 series IGBT with an ultrafast soft recovery diode.



IRGP35B60PD-EP  Features


  • NPT Technology, Positive Temperature Coefficient

  • Lower VCE(SAT)

  • Lower Parasitic Capacitances

  • Minimal Tail Current

  • HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode

  • Tighter Distribution of Parameters

  • Higher Reliability



IRGP35B60PD-EP Applications


  • Telecom and Server SMPS

  • PFC and ZVS SMPS Circuits

  • Uninterruptable Power Supplies

  • Consumer Electronics Power Supplies


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