IXGR50N60B2D1

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Manufacturer part number:IXGR50N60B2D1

Manufacturer:IXYS

Description:IGBT 600V 68A 200W ISOPLUS247

Case Package:SOT-23

Datasheet:IXGR50N60B2D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFAST™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*50N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	200W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	65ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	68A
Reverse Recovery Time	35 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.2V
Turn On Time	43 ns
Test Condition	480V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 40A
Turn Off Time-Nom (toff)	430 ns
Gate Charge	140nC
Current - Collector Pulsed (Icm)	300A
Td (on/off) @ 25°C	18ns/190ns
Switching Energy	550μJ (off)
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant