SGW15N120FKSA1

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	198W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-247AC
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	30A
Turn On Time	68 ns
Test Condition	800V, 15A, 33 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.6V @ 15V, 15A
Turn Off Time-Nom (toff)	683 ns
IGBT Type	NPT
Gate Charge	130nC
Current - Collector Pulsed (Icm)	52A
Td (on/off) @ 25°C	18ns/580ns
Switching Energy	1.9mJ
RoHS Status	RoHS Compliant

Name

Value

Type

Parameter

Mounting Type

Through Hole

Package / Case

TO-247-3

Surface Mount

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2006

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

[email protected] Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Number of Elements

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

198W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-247AC

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

30A

Turn On Time

68 ns

Test Condition

800V, 15A, 33 Ω, 15V

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 15A

Turn Off Time-Nom (toff)

683 ns

IGBT Type

NPT

Gate Charge

130nC

Current - Collector Pulsed (Icm)

52A

Td (on/off) @ 25°C

18ns/580ns

Switching Energy

1.9mJ

RoHS Status

RoHS Compliant

SGW15N120FKSA1 Description

The SGW15N120FKSA1 is a Fast IGBT in NPT-technology. With collector-emitter voltage levels ranging from 1100 to 1600V and TrenchStop? technology, an assortment of IGBT transistors from Infineon are available. Devices in the range have an integrated high-speed, quick recovery anti-parallel diode. Known for its high efficiency and fast switching, the Insulated Gate Bipolar Transistor, or IGBT is a three-terminal power semiconductor device. The IGBT combines an isolated gate FET for the control input and a bipolar power transistor as a switch in a single component, combining the specific gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage performance of bipolar transistors.

SGW15N120FKSA1 Features

NPT-Technology offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
40% lower Eoff compared to previous generation
Short circuit withstand time – 10 μs
Designed for:

- Motor controls

- Inverter

- SMPS

SGW15N120FKSA1 Applications

It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
It is used in UPS (Uninterruptible Power Supply) system.
It is used in AC and DC motor drives offering speed control.
It is used in chopper and inverters.
It is used in solar inverters.