IRG4BC15UD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4BC15UD Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2001
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
ULTRA FAST SOFT RECOVERY
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
49W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
28ns
JEDEC-95 Code
TO-220AB
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
14A
Turn On Time
37 ns
Test Condition
480V, 7.8A, 75 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 7.8A
Turn Off Time-Nom (toff)
400 ns
Gate Charge
23nC
Current - Collector Pulsed (Icm)
42A
Td (on/off) @ 25°C
17ns/160ns
Switching Energy
240μJ (on), 260μJ (off)
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
300
$1.83750
$551.25
IRG4BC15UD Product Details
IRG4BC15UD Description
IRG4BC15UD is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies that is optimized for high frequencies from10 to 30 kHz in hard switching. IGBT IRG4BC15UD is co-packaged with ultra-soft-recovery antiparallel diodes to reduce noise, EMI, and switching losses.
IRG4BC15UD Features
High noise immune
Ultrafast soft recovery diode
Compatible with high voltage gate driver IC's
Single package switch for bridge circuit applications
Available in the industry-standard TO-220AB package