IRG4BC40W datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC40W Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
LOW CONDUCTION LOSS
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Power - Max
160W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-220AB
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
40A
Turn On Time
48 ns
Test Condition
480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 20A
Turn Off Time-Nom (toff)
294 ns
Gate Charge
98nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
27ns/100ns
Switching Energy
110μJ (on), 230μJ (off)
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
200
$3.12860
$625.72
IRG4BC40W Product Details
IRG4BC40W Description
The Infineon Technologies IRG4BC40W is an insulated gate bipolar transistor designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
IRG4BC40W Features
Lower switching losses allow for more cost-effective operation than power MOSFETs up to 150KHz (hard switched" mode)
Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300KHz)
IRG4BC40W Applications
Switch-Mode Power Supply and PFC (power factor correction) applications