IRG4IBC30KDPBF

new-10%

Manufacturer part number:IRG4IBC30KDPBF

Manufacturer:Infineon Technologies

Description:IRG4IBC30KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4IBC30KDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	ULTRA FAST SOFT RECOVERY
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	45W
Current Rating	17A
Number of Elements	1
Element Configuration	Single
Power Dissipation	45W
Case Connection	ISOLATED
Input Type	Standard
Turn On Delay Time	60 ns
Transistor Application	POWER CONTROL
Rise Time	42ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	160 ns
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	17A
Reverse Recovery Time	42 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.7V
Turn On Time	100 ns
Test Condition	480V, 16A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 16A
Turn Off Time-Nom (toff)	370 ns
Gate Charge	67nC
Current - Collector Pulsed (Icm)	34A
Td (on/off) @ 25°C	60ns/160ns
Switching Energy	600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	120ns
Height	16.129mm
Length	10.7442mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free