Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRG4BC20FD-STRR

IRG4BC20FD-STRR

IRG4BC20FD-STRR

Infineon Technologies

IRG4BC20FD-STRR datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC20FD-STRR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish MATTE TIN OVER NICKEL
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 60W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 37ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 16A
Turn On Time 63 ns
Test Condition 480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 9A
Turn Off Time-Nom (toff) 610 ns
Gate Charge 27nC
Current - Collector Pulsed (Icm) 64A
Td (on/off) @ 25°C 43ns/240ns
Switching Energy 250μJ (on), 640μJ (off)
RoHS Status Non-RoHS Compliant
IRG4BC20FD-STRR Product Details

IRG4BC20FD-STRR  Benefits

Generation 4 IGBTs offer the highest efficiencies

 available

IGBTs optimized for specific application conditions

HEXFRED diodes optimized for performance with

 IGBTs. Minimized recovery characteristics require

 less/no snubbing

Designed to be a "drop-in" replacement for equivalent

 industry-standard Generation 3 IR IGBTs



IRG4BC20FD-STRR  Features

Fast: Optimized for medium operating

 frequencies ( 1-5 kHz in hard switching, >20

 kHz in resonant mode).

Generation 4 IGBT design provides tighter

 parameter distribution and higher efficiency than

 Generation 3

IGBT co-packaged with HEXFREDTM ultrafast,

 ultra-soft-recovery anti-parallel diodes for use

 in bridge configurations

Industry-standard D2Pak package




Related Part Number

FGD4536TM_SN00306
IXGQ96N30TBD1
IXGQ96N30TBD1
$0 $/piece
IHW30N90R
STGP30NC60K
TIG067SS-TL-2W
IXSH24N60U1
IXSH24N60U1
$0 $/piece
IXGQ90N33TC
IXGQ90N33TC
$0 $/piece
IRGB4640DPBF

Get Subscriber

Enter Your Email Address, Get the Latest News