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GT10J312(Q)

GT10J312(Q)

GT10J312(Q)

Toshiba Semiconductor and Storage

IGBT 600V 10A 60W TO220SM

SOT-23

GT10J312(Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package TO-220SM
Operating Temperature 150°C TJ
Packaging Tube
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 60W
Base Part Number GT10
Input Type Standard
Power - Max 60W
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 10A
Reverse Recovery Time 200 ns
Collector Emitter Breakdown Voltage 600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 10A
Test Condition 300V, 10A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Current - Collector Pulsed (Icm) 20A
Td (on/off) @ 25°C 400ns/400ns
RoHS Status RoHS Compliant
Lead Free Lead Free

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