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IHW30N90R

IHW30N90R

IHW30N90R

Infineon Technologies

IGBT 900V 60A 454W TO247-3

SOT-23

IHW30N90R Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 454W
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 454W
Case Connection COLLECTOR
Input Type Standard
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 60A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 1.7V
Test Condition 600V, 30A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
Turn Off Time-Nom (toff) 640 ns
IGBT Type Trench Field Stop
Gate Charge 200nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C -/511ns
Switching Energy 1.46mJ
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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