IRG4BC20KD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4BC20KD-SPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
2g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
ULTRA FAST SOFT RECOVERY
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
60W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
16A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
IRG4BC20KD-SPBF
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
60W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
54 ns
Forward Current
7A
Transistor Application
MOTOR CONTROL
Rise Time
37ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
180 ns
Collector Emitter Voltage (VCEO)
2.8V
Max Collector Current
16A
Reverse Recovery Time
37 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.27V
Turn On Time
88 ns
Max Forward Surge Current (Ifsm)
32A
Test Condition
480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 9A
Turn Off Time-Nom (toff)
380 ns
Gate Charge
34nC
Td (on/off) @ 25°C
54ns/180ns
Switching Energy
340μJ (on), 300μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
110ns
Height
4.83mm
Length
10.668mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.398267
$1.398267
10
$1.319120
$13.1912
100
$1.244453
$124.4453
500
$1.174012
$587.006
1000
$1.107559
$1107.559
IRG4BC20KD-SPBF Product Details
IRG4BC20KD-SPBF Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) powermodules provide low conduction and switching losses aswell as short circuit ruggedness. They are designed forapplications such as motor control, uninterrupted powersupplies (UPS) and general inverters where short circuitruggedness is a required feature.
IRG4BC20KD-SPBF Features
·Fast: Optimized for medium operating
frequencies( 1-5 kHzin hard switching.>20 kHz in resonant mode).
·Generation 4 IGBT design provides tighter
parameter distribution and higher efficiencythan Generation3
·IGBT co-packaged with HEXFREDM ultrafast ultra-soft-recoveryanti-parallel diodes for use in bridge confiqurations