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IRG4BC20KD-SPBF

IRG4BC20KD-SPBF

IRG4BC20KD-SPBF

Infineon Technologies

IRG4BC20KD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC20KD-SPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 2g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA FAST SOFT RECOVERY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 60W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 16A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IRG4BC20KD-SPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 54 ns
Forward Current 7A
Transistor Application MOTOR CONTROL
Rise Time 37ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 180 ns
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 16A
Reverse Recovery Time 37 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.27V
Turn On Time 88 ns
Max Forward Surge Current (Ifsm) 32A
Test Condition 480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 9A
Turn Off Time-Nom (toff) 380 ns
Gate Charge 34nC
Td (on/off) @ 25°C 54ns/180ns
Switching Energy 340μJ (on), 300μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 110ns
Height 4.83mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.398267 $1.398267
10 $1.319120 $13.1912
100 $1.244453 $124.4453
500 $1.174012 $587.006
1000 $1.107559 $1107.559
IRG4BC20KD-SPBF Product Details

IRG4BC20KD-SPBF                                  Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

 

 

IRG4BC20KD-SPBF                                Features

·Fast: Optimized for medium operating

frequencies( 1-5 kHzin hard switching.>20 kHz in resonant mode).

·Generation 4 IGBT design provides tighter

parameter distribution and higher efficiencythan Generation3

·IGBT co-packaged with HEXFREDM ultrafast ultra-soft-recoveryanti-parallel diodes for use in bridge confiqurations

·Industry standard D2Pak package·Lead-Free

 

IRG4BC20KD-SPBF                                Application

? AC & DC Motor Controls

? General Purpose Inverters

? Robotics

? Servo Controls

? UPS 


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