APT64GA90B2D30

new-10%

Manufacturer part number:APT64GA90B2D30

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 900V 117A 3-Pin(3+Tab) TO-247

Case Package:SOT-23

Datasheet:APT64GA90B2D30 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	29 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	POWER MOS 8™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Max Power Dissipation	500W
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	500W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	900V
Max Collector Current	117A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	900V
Turn On Time	44 ns
Test Condition	600V, 38A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 38A
Turn Off Time-Nom (toff)	352 ns
IGBT Type	PT
Gate Charge	162nC
Current - Collector Pulsed (Icm)	193A
Td (on/off) @ 25°C	18ns/131ns
Switching Energy	1192μJ (on), 1088μJ (off)
Radiation Hardening	No
RoHS Status	RoHS Compliant