IRG4BC30F-SPBF

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Manufacturer part number:IRG4BC30F-SPBF

Manufacturer:Infineon Technologies

Description:IRG4BC30F-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC30F-SPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Surface Mount, Through Hole
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK
Weight	260.39037mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	600V
Max Power Dissipation	100W
Current Rating	31A
Base Part Number	IRG4BC30F-SPBF
Element Configuration	Single
Power Dissipation	100W
Input Type	Standard
Power - Max	100W
Rise Time	15ns
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	31A
Collector Emitter Breakdown Voltage	600V
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	31A
Test Condition	480V, 17A, 23Ohm, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 17A
Gate Charge	51nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	21ns/200ns
Switching Energy	230μJ (on), 1.18mJ (off)
Height	4.83mm
Length	10.5156mm
Width	4.699mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$1.23000	$1.23
500	$1.2177	$608.85
1000	$1.2054	$1205.4
1500	$1.1931	$1789.65
2000	$1.1808	$2361.6
2500	$1.1685	$2921.25

IRG4BC30F-SPBF Description

IRG4BC30F-SPBF is a 600V insulated gate bipolar transistor. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. The Infineon IRG4BC30F-SPBF can be designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC30F-SPBF is in the TO‐220AB package with 100W power dissipation.