IXGL75N250

new-10%

Manufacturer part number:IXGL75N250

Manufacturer:IXYS

Description:IGBT 2500V 110A 430W I5-PAK

Case Package:SOT-23

Datasheet:IXGL75N250 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUSi5-Pak™
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	UL RECOGNIZED, HIGH RELIABILITY
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	430W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	5
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	ISOLATED
Input Type	Standard
Power - Max	430W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.9V
Max Collector Current	110A
Collector Emitter Breakdown Voltage	2.5kV
Voltage - Collector Emitter Breakdown (Max)	2500V
Turn On Time	305 ns
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 75A
Turn Off Time-Nom (toff)	420 ns
Gate Charge	410nC
Current - Collector Pulsed (Icm)	580A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant