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IKP40N65F5XKSA1

  • IKP40N65F5XKSA1
  • IKP40N65F5XKSA1

IKP40N65F5XKSA1

IKP40N65F5XKSA1

Infineon Technologies

IKP40N65F5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKP40N65F5XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 255W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Power Dissipation 255W
Input Type Standard
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 74A
Reverse Recovery Time 60 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 20A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Gate Charge 95nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 19ns/160ns
Switching Energy 360μJ (on), 100μJ (off)
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.443920 $13.44392
10 $12.682943 $126.82943
100 $11.965041 $1196.5041
500 $11.287774 $5643.887
1000 $10.648844 $10648.844
IKP40N65F5XKSA1 Product Details

IKP40N65F5XKSA1 Description


When employing this Infineon Technologies IKP40N65F5XKSA1 IGBT transistor, don't be scared to increase the amps in your device. It features a collector-emitter voltage that can go as high as 650 V. It can dissipate up to 255000 mW of power. It is created in just one design. The operating temperature range for the IKP40N65F5XKSA1 IGBT transistor is -40 °C to 175 °C.



IKP40N65F5XKSA1 Features


  • Low Qg

  • 650V breakdown voltage

  • Pb-free lead plating; RoHS compliant

  • Maximum junction temperature 175°C

  • Qualified according to JEDEC for target applications

  • IGBT co-packed with RAPID 1 fast and soft antiparallel diode

  • Best-in-Class efficiency in hard switching and resonant topologies



IKP40N65F5XKSA1 Applications


  • Industrial

  • Enterprise systems

  • Personal electronics


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