IRG4BC40SPBF

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Manufacturer part number:IRG4BC40SPBF

Manufacturer:Infineon Technologies

Description:IRG4BC40SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC40SPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount, Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	160W
Terminal Position	SINGLE
Number of Elements	1
Element Configuration	Dual
Power Dissipation	160W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	22 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	650 ns
Collector Emitter Voltage (VCEO)	1.5V
Max Collector Current	60A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.5V
Turn On Time	44 ns
Test Condition	480V, 31A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 31A
Turn Off Time-Nom (toff)	1940 ns
Gate Charge	100nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	22ns/650ns
Switching Energy	450μJ (on), 6.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	570ns
Height	16.51mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free