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APT25GP90BDQ1G

APT25GP90BDQ1G

APT25GP90BDQ1G

Microsemi Corporation

Trans IGBT Chip N-CH 900V 72A 3-Pin(3+Tab) TO-247

SOT-23

APT25GP90BDQ1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 [B]
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 7®
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 900V
Max Power Dissipation 417W
Current Rating 72A
Element Configuration Single
Input Type Standard
Power - Max 417W
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 72A
Collector Emitter Breakdown Voltage 900V
Voltage - Collector Emitter Breakdown (Max) 900V
Current - Collector (Ic) (Max) 72A
Test Condition 600V, 40A, 4.3Ohm, 15V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 25A
IGBT Type PT
Gate Charge 110nC
Current - Collector Pulsed (Icm) 110A
Td (on/off) @ 25°C 13ns/55ns
Switching Energy 370μJ (off)
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
57 $9.72632 $554.40024

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