IRG6S320UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG6S320UPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Supplier Device Package
D2PAK
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
114W
Base Part Number
IRG6S320UPBF
Element Configuration
Single
Power Dissipation
114W
Input Type
Standard
Power - Max
114W
Collector Emitter Voltage (VCEO)
1.65V
Max Collector Current
50A
Collector Emitter Breakdown Voltage
330V
Voltage - Collector Emitter Breakdown (Max)
330V
Current - Collector (Ic) (Max)
50A
Collector Emitter Saturation Voltage
1.65V
Test Condition
196V, 12A, 10Ohm
Vce(on) (Max) @ Vge, Ic
1.65V @ 15V, 24A
IGBT Type
Trench
Gate Charge
46nC
Td (on/off) @ 25°C
24ns/89ns
Radiation Hardening
No
RoHS Status
RoHS Compliant
IRG6S320UPBF Product Details
IRG6S320UPBF Description
IRG6S320UPBF is a 330v PDP trench IGBT. This IGBT is specifically designed for applications in Plasma Display Panels. This IRG6S320UPBF utilizes advanced trench IGBT technology to achieve low VCE(on) and low Epul .sE TM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.
IRG6S320UPBF Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency