STGB20NB37LZT4

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Manufacturer part number:STGB20NB37LZT4

Manufacturer:STMicroelectronics

Description:STGB20NB37LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB20NB37LZT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB20
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	2.3 μs
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	2 μs
Collector Emitter Voltage (VCEO)	375V
Max Collector Current	40A
Continuous Drain Current (ID)	20A
Collector Emitter Breakdown Voltage	425V
Collector Emitter Saturation Voltage	2V
Max Breakdown Voltage	425V
Turn On Time	2900 ns
Test Condition	250V, 20A, 1k Ω, 4.5V
Vce(on) (Max) @ Vge, Ic	2V @ 4.5V, 20A
Turn Off Time-Nom (toff)	15000 ns
Gate Charge	51nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	2.3μs/2μs
Switching Energy	11.8mJ (off)
Gate-Emitter Thr Voltage-Max	2V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free