IXGH38N60U1

new-10%

Manufacturer part number:IXGH38N60U1

Manufacturer:IXYS

Description:IGBT 600V 76A 200W TO247AD

Case Package:SOT-23

Datasheet:IXGH38N60U1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Packaging	Tube
Published	2012
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	76A
Continuous Drain Current (ID)	38A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Drain to Source Breakdown Voltage	600V
Turn On Time	200 ns
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 38A
Turn Off Time-Nom (toff)	1800 ns
Fall Time-Max (tf)	1100ns
RoHS Status	RoHS Compliant