IRG4IBC30FD              Description

IGBT (insulated gate bipolar transistor) provides a high switching speed necessary for PWM VFD operation. IGBTs are capable of switching on and off several thousand times a second. A VFD IGBT can turn on in less than 400 nanoseconds and off in approximately 500 nanoseconds.

IRG4IBC30FD                   Features

? Very Low 1.59V votage drop

? 2.5kV, 60s insulation voltage …

? 4.8 mm creapage distance to heatsink

? Fast: Optimized for medium operating

 frequencies ( 1-5 kHz in hard switching, >20

 kHz in resonant mode).

? IGBT co-packaged with HEXFREDTM ultrafast,

 ultrasoft recovery antiparallel diodes

? Tighter parameter distribution

? Industry standard Isolated TO-220 FullpakTM

 Outline

IRG4IBC30FD                      Applications

Desktop PC power supplies for

Next-generation AMD processors

Voltage regulator modules (VRM)