HGTG30N60A4

new-10%

Manufacturer part number:HGTG30N60A4

Manufacturer:ON Semiconductor

Description:HGTG30N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:HGTG30N60A4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	463W
Current Rating	75A
Base Part Number	HGTG30N60
Number of Elements	1
Element Configuration	Single
Power Dissipation	463W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	25 ns
Transistor Application	POWER CONTROL
Rise Time	12ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	150 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.8V
Turn On Time	35 ns
Test Condition	390V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 30A
Continuous Collector Current	75A
Turn Off Time-Nom (toff)	238 ns
Gate Charge	225nC
Current - Collector Pulsed (Icm)	240A
Td (on/off) @ 25°C	25ns/150ns
Switching Energy	280μJ (on), 240μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7V
Fall Time-Max (tf)	70ns
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free