IRGS4620DTRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGS4620DTRRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
260.39037mg
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
140W
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Element Configuration
Single
Input Type
Standard
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.85V
Max Collector Current
20A
Reverse Recovery Time
68 ns
Collector Emitter Breakdown Voltage
600V
Current - Collector (Ic) (Max)
32A
Collector Emitter Saturation Voltage
1.97V
Test Condition
400V, 12A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.85V @ 15V, 12A
Gate Charge
25nC
Current - Collector Pulsed (Icm)
36A
Td (on/off) @ 25°C
31ns/83ns
Switching Energy
75μJ (on), 225μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
RoHS Status
RoHS Compliant
IRGS4620DTRRPBF Product Details
IRGS4620DTRRPBF Description
IRGS4620DTRRPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide high efficiency in a wide range of applications. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tight distribution of parameters. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of applications. Improved Reliability can be ensured due to rugged hard switching performance and higher power capability.