IRG4P254S Benefits
Generation 4 IGBTs offer the highest efficiency available
IGBT's optimized for specified application conditions
High Power density
Lower conduction losses than similarly rated MOSFET
Lower Gate Charge than equivalent MOSFET
Simple Gate Drive characteristics compared to Thyristor
IRG4P254S Features
Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry-standard TO-247AC package
