IRG4P254S  Benefits

Generation 4 IGBTs offer the highest efficiency available

IGBT's optimized for specified application conditions

High Power density

Lower conduction losses than similarly rated MOSFET

Lower Gate Charge than equivalent MOSFET

Simple Gate Drive characteristics compared to Thyristor

IRG4P254S  Features

Standard:  Optimized for minimum saturation   voltage and  operating frequencies up to 10kHz

Generation 4 IGBT design provides tighter  parameter distribution and higher efficiency than  Generation 3

Industry-standard TO-247AC package