irg4pc30fdpbf Description

The IRG4PC30FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED? ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. The HEXFRED? diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.

irg4pc30fdpbf Features

? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
? Industry standard TO-247AC package
? Lead-Free

irg4pc30fdpbf Applications

variable-frequency drives (VFDs) /electric cars /trains /variable-speed refrigerators /lamp ballasts /arc-welding machines /air conditioners.