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IRG4PC30UDPBF

IRG4PC30UDPBF

IRG4PC30UDPBF

Infineon Technologies

IRG4PC30UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

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IRG4PC30UDPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST SOFT RECOVERY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 23A
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 40 ns
Transistor Application POWER CONTROL
Rise Time 21ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 91 ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 23A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 62 ns
Test Condition 480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Turn Off Time-Nom (toff) 300 ns
Gate Charge 50nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 40ns/91ns
Switching Energy 380μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 20.3mm
Length 15.875mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.69000 $4.69
25 $3.98280 $99.57
100 $3.45190 $345.19
500 $2.93852 $1469.26
1,000 $2.47827 $2.47827
IRG4PC30UDPBF Product Details

IRG4PC30UDPBF Description

 

IRG4PC30UDPBF IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. IRG4PC30UDPBF MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT. Infineon Technologies IRG4PC30UDPBF half-bridge gate driver is used in isolated dc-to-dc power supply modules, and solar inverters.

 

 

IRG4PC30UDPBF Features

 

Floating channel designed for bootstrap operation

Undervoltage lockout

Combines low conduction losses with high switching speed

Tighter parameter distribution and higher efficiency than previous generations

IGBT co-packaged with ultrafast, ultrasoft recovery antiparallel diodes

 

 

IRG4PC30UDPBF Applications

 

Light vehicles

Power Management (SMPS)

Reference Design

Power tools

Robotics


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