IRG4PC30UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4PC30UDPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
ULTRA FAST SOFT RECOVERY
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
100W
Current Rating
23A
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
40 ns
Transistor Application
POWER CONTROL
Rise Time
21ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
91 ns
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
23A
Reverse Recovery Time
42 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Turn On Time
62 ns
Test Condition
480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 12A
Turn Off Time-Nom (toff)
300 ns
Gate Charge
50nC
Current - Collector Pulsed (Icm)
92A
Td (on/off) @ 25°C
40ns/91ns
Switching Energy
380μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Height
20.3mm
Length
15.875mm
Width
5.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.69000
$4.69
25
$3.98280
$99.57
100
$3.45190
$345.19
500
$2.93852
$1469.26
1,000
$2.47827
$2.47827
IRG4PC30UDPBF Product Details
IRG4PC30UDPBF Description
IRG4PC30UDPBF IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. IRG4PC30UDPBF MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT. Infineon Technologies IRG4PC30UDPBF half-bridge gate driver is used in isolated dc-to-dc power supply modules, and solar inverters.
IRG4PC30UDPBF Features
Floating channel designed for bootstrap operation
Undervoltage lockout
Combines low conduction losses with high switching speed
Tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with ultrafast, ultrasoft recovery antiparallel diodes