IKD06N60RAATMA1

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Manufacturer part number:IKD06N60RAATMA1

Manufacturer:Infineon Technologies

Description:IKD06N60RAATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IKD06N60RAATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchStop™
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Max Power Dissipation	100W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	GENERAL PURPOSE
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	12A
Reverse Recovery Time	68 ns
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Turn On Time	22 ns
Test Condition	400V, 6A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 6A
Turn Off Time-Nom (toff)	335 ns
IGBT Type	Trench Field Stop
Gate Charge	48nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	12ns/127ns
Switching Energy	110μJ (on), 220μJ (off)
RoHS Status	ROHS3 Compliant