IRGP6690DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGP6690DPBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
483W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Input Type
Standard
Power - Max
483W
Collector Emitter Voltage (VCEO)
1.95V
Max Collector Current
140A
Reverse Recovery Time
90 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.65V
Test Condition
400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 75A
Gate Charge
140nC
Current - Collector Pulsed (Icm)
225A
Td (on/off) @ 25°C
85ns/222ns
Switching Energy
3.1mJ (on), 2.8mJ (off)
Height
20.7mm
Length
15.87mm
Width
5.31mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.340000
$8.34
10
$7.867925
$78.67925
100
$7.422570
$742.257
500
$7.002425
$3501.2125
1000
$6.606061
$6606.061
IRGP6690DPBF Product Details
IRGP6690DPBF Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
IRGP6690DPBF Features
Low VcEow, and switching losses
Optimized diode for full-bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C