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IRGP6690DPBF

IRGP6690DPBF

IRGP6690DPBF

Infineon Technologies

IRGP6690DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP6690DPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 483W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 483W
Collector Emitter Voltage (VCEO) 1.95V
Max Collector Current 140A
Reverse Recovery Time 90 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.65V
Test Condition 400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 75A
Gate Charge 140nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 85ns/222ns
Switching Energy 3.1mJ (on), 2.8mJ (off)
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.340000 $8.34
10 $7.867925 $78.67925
100 $7.422570 $742.257
500 $7.002425 $3501.2125
1000 $6.606061 $6606.061
IRGP6690DPBF Product Details

IRGP6690DPBF Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.



IRGP6690DPBF Features

Low VcEow, and switching losses

Optimized diode for full-bridge hard switch converters

Square RBSOA and maximum junction temperature 175°C

5us short circuit SoA

Positive vce ,ox, temperature coefficient

Lead-free, RoHS compliant



IRGP6690DPBF Applications

Welding

H Bridge Converters


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