IRG4PF50WD-201P  Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop (FS) Trench construction and provides superior performance in demanding switching applications. Offering both low on?state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. A rugged co?packaged free-wheeling diode is incorporated into the device with a low forward voltage.

IRG4PF50WD-201P  Features

Optimized for use in Welding and Switch Mode Power Supply applications

Industry benchmark switching losses improve the efficiency of all power supply topologies

50% reduction of the Eoff parameter

Low IGBT conduction losses

The latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability

IGBT oo-packaged with HEXFREDTM ultrafast. ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Industry-standard TO-247 AC package

Lead-Free

IRG4PF50WD-201P  Applications

Lower switching losses allow more cost-effective operation and hence the efficient replacement of larger-die MOSFETs up to 100kH

HEXFREDTM diodes optimized for performance with IGBTs Minimized recovery characteristics reduce noise, EMI, and switching losses