IRG4PH50SPBF

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Manufacturer part number:IRG4PH50SPBF

Manufacturer:Infineon Technologies

Description:IRG4PH50SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PH50SPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2004
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Voltage - Rated DC	1.2kV
Max Power Dissipation	200W
Current Rating	57A
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	32 ns
Transistor Application	POWER CONTROL
Rise Time	29ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	845 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	57A
Continuous Drain Current (ID)	57A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	1.2kV
Gate to Source Voltage (Vgs)	30V
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.75V
Input Capacitance	3.6nF
Turn On Time	62 ns
Test Condition	960V, 33A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 33A
Max Junction Temperature (Tj)	150°C
Continuous Collector Current	57A
Turn Off Time-Nom (toff)	2170 ns
Gate Charge	167nC
Current - Collector Pulsed (Icm)	114A
Td (on/off) @ 25°C	32ns/845ns
Switching Energy	1.8mJ (on), 19.6mJ (off)
Height	24.99mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free