IXGK120N60C2

new-10%

Manufacturer part number:IXGK120N60C2

Manufacturer:IXYS

Description:IGBT 600V 75A 830W TO264

Case Package:SOT-23

Datasheet:IXGK120N60C2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Weight	10.000011g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	HiPerFAST™, Lightspeed 2™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation	830W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*120N60
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	830W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	100 ns
Test Condition	400V, 80A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 100A
Turn Off Time-Nom (toff)	257 ns
IGBT Type	PT
Gate Charge	370nC
Current - Collector Pulsed (Icm)	500A
Td (on/off) @ 25°C	40ns/120ns
Switching Energy	1.7mJ (on), 1mJ (off)
RoHS Status	RoHS Compliant