FGH30T65UPDT-F155

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Manufacturer part number:FGH30T65UPDT-F155

Manufacturer:ON Semiconductor

Description:FGH30T65UPDT-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH30T65UPDT-F155 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2016
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	250W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	60A
Reverse Recovery Time	43 ns
JEDEC-95 Code	TO-247AB
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	52 ns
Test Condition	400V, 30A, 8 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 30A
Turn Off Time-Nom (toff)	170 ns
IGBT Type	Trench Field Stop
Gate Charge	155nC
Current - Collector Pulsed (Icm)	90A
Td (on/off) @ 25°C	22ns/139ns
Switching Energy	760μJ (on), 400μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7.5V
RoHS Status	ROHS3 Compliant