IRG4RC10KTR Description

The IRG4RC10KTR is an insulated gate bipolar transistor. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

IRG4RC10KTR Features

• Generation 4 IGBT design provides higher efficiency  than Generation 3

• Industry standard TO-252AA package

• Short Circuit Rated UltraFast:  Optimized for high  operating frequencies >5.0 kHz , and Short Circuit  Rated to 10μs @ 125°C, VGE = 15V

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

IRG4RC10KTR Applications

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.

• It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

• It is used in UPS (Uninterruptible Power Supply) system.