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IRG4PH20KDPBF

IRG4PH20KDPBF

IRG4PH20KDPBF

Infineon Technologies

IRG4PH20KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4PH20KDPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1998
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 60W
Current Rating 11A
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 30ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 4.3V
Max Collector Current 11A
Reverse Recovery Time 51 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.17V
Turn On Time 80 ns
Test Condition 800V, 5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4.3V @ 15V, 5A
Turn Off Time-Nom (toff) 730 ns
Gate Charge 28nC
Current - Collector Pulsed (Icm) 22A
Td (on/off) @ 25°C 50ns/100ns
Switching Energy 620μJ (on), 300μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.557445 $3.557445
10 $3.356080 $33.5608
100 $3.166113 $316.6113
500 $2.986899 $1493.4495
1000 $2.817829 $2817.829
IRG4PH20KDPBF Product Details

IRG4PH20KDPBF Description

 

IRG4PH20KDPBF transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4PH20KDPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

IRG4PH20KDPBF Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IRG4PH20KDPBF Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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