STGDL6NC60DIT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGDL6NC60DIT4 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
50W
Terminal Form
GULL WING
Base Part Number
STGDL6
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Turn On Delay Time
6.7 ns
Power - Max
50W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
67 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
13A
Reverse Recovery Time
23 ns
Collector Emitter Breakdown Voltage
600V
Max Breakdown Voltage
600V
Turn On Time
10.5 ns
Test Condition
390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 3A
Turn Off Time-Nom (toff)
122 ns
Gate Charge
12nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
6.7ns/46ns
Switching Energy
32μJ (on), 24μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STGDL6NC60DIT4 Product Details
STGDL6NC60DIT4 Description
This new PowerMESHTM technology-based line of devices exhibits exceptionally low turn-off energy thanks to a revolutionary lifetime control method, offering the optimal trade-off between on-state voltage and switching losses and enabling extremely high working frequencies.
STGDL6NC60DIT4 Features
Low CRES / CIES ratio (no cross-conduction susceptibility)