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IRG4RC10STR

  • IRG4RC10STR
  • IRG4RC10STR

IRG4RC10STR

IRG4RC10STR

Infineon Technologies

IRG4RC10STR datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4RC10STR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Reach Compliance Code unknown
Base Part Number IRG4RC10S
Input Type Standard
Power - Max 38W
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 14A
Power Dissipation-Max (Abs) 15W
Test Condition 480V, 8A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 8A
Gate Charge 15nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 25ns/630ns
Switching Energy 140μJ (on), 2.58mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 1100ns
RoHS Status Non-RoHS Compliant
IRG4RC10STR Product Details

IRG4RC10STR Description

IRG4RC10STR is a single IGBT from the manufacturer Infineon Technologies with the breakdown voltage of 600V. The operating temperature of the IRG4RC10STR is -55°C~150°C TJ and its maximum power dissipation is 38W. IRG4RC10STR has 3 pins and it is available in Tape & Reel (TR) packaging way. The Gate-Emitter Voltage-Max of IRG4RC10STR is 20V.



IRG4RC10STR Features


  • Test Condition: 480V, 8A, 100 Ω, 15V

  • Td (on/off) @ 25°C: 25ns/630ns

  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A

  • Switching Energy: 140μJ (on), 2.58mJ (off)

  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63



IRG4RC10STR Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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