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IXGT72N60B3

IXGT72N60B3

IXGT72N60B3

IXYS

IGBT Modules GenX3 B3-Class IGBTs

SOT-23

IXGT72N60B3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Packaging Tube
Series GenX3™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 540W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 540W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 600V
Turn On Time 63 ns
Test Condition 480V, 50A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 60A
Turn Off Time-Nom (toff) 370 ns
IGBT Type PT
Gate Charge 230nC
Current - Collector Pulsed (Icm) 400A
Td (on/off) @ 25°C 31ns/150ns
Switching Energy 1.38mJ (on), 1.05mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 160ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
30 $8.13633 $244.0899

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