STGP20H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGP20H60DF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
167W
Base Part Number
STGP20
Element Configuration
Single
Power Dissipation
167W
Input Type
Standard
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
40A
Reverse Recovery Time
90 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Test Condition
400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 20A
IGBT Type
Trench Field Stop
Gate Charge
115nC
Current - Collector Pulsed (Icm)
80A
Td (on/off) @ 25°C
42.5ns/177ns
Switching Energy
209μJ (on), 261μJ (off)
Gate-Emitter Voltage-Max
20V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.18000
$3.18
50
$2.73060
$136.53
100
$2.35370
$235.37
500
$1.96668
$983.34
1,000
$1.66113
$1.66113
2,500
$1.55928
$3.11856
5,000
$1.54230
$7.7115
STGP20H60DF Product Details
STGP20H60DF Description
STGP20H60DF is a type of high-speed trench gate field-stop IGBT designed based on an advanced proprietary trench gate and field stop structure. It is able to provide extremely low conduction and switching losses, maximizing the efficiency of high-frequency converters. An easier paralleling operation can be ensured by a positive VCE(sat) temperature coefficient and very tight parameter distribution.