IRG4RC10STRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4RC10STRRPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Supplier Device Package
D-Pak
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
38W
Base Part Number
IRG4RC10SPBF
Element Configuration
Single
Power Dissipation
38W
Input Type
Standard
Power - Max
38W
Collector Emitter Voltage (VCEO)
1.8V
Max Collector Current
14A
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
14A
Collector Emitter Saturation Voltage
1.7V
Max Breakdown Voltage
600V
Test Condition
480V, 8A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 8A
Gate Charge
15nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
25ns/630ns
Switching Energy
140μJ (on), 2.58mJ (off)
Radiation Hardening
No
RoHS Status
RoHS Compliant
IRG4RC10STRRPBF Product Details
IRG4RC10STRRPBF Description
IRG4RC10STRRPBF is a 600v standard-speed Insulated gate bipolar transistor. IRG4RC10STRRPBF is manufactured by Infineon Technologies. Its category belongs to Electronic Components ICs. It is applied to many fields, like Automotive Advanced driver assistance systems (ADAS) Industrial Factory automation & control Enterprise systems Enterprise machines. And the main parameter of this part is IGBT 600V 14A 38W DPAK. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).
IRG4RC10STRRPBF Features
Extremely low voltage drop; 1.0V typical at 2A, 100°C
Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than the previous generation