SGF5N150UFTU

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Manufacturer part number:SGF5N150UFTU

Manufacturer:ON Semiconductor

Description:SGF5N150UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:SGF5N150UFTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	44 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Number of Pins	3
Weight	6.962g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.5kV
Max Power Dissipation	62.5W
Current Rating	5A
Number of Elements	1
Element Configuration	Single
Power Dissipation	62.5W
Case Connection	ISOLATED
Input Type	Standard
Turn On Delay Time	10 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	30 ns
Collector Emitter Voltage (VCEO)	1.5kV
Max Collector Current	10A
Collector Emitter Breakdown Voltage	1.5kV
Voltage - Collector Emitter Breakdown (Max)	1500V
Collector Emitter Saturation Voltage	4.7V
Turn On Time	25 ns
Test Condition	600V, 5A, 10 Ω, 10V
Vce(on) (Max) @ Vge, Ic	5.5V @ 10V, 5A
Turn Off Time-Nom (toff)	100 ns
Gate Charge	30nC
Current - Collector Pulsed (Icm)	20A
Td (on/off) @ 25°C	10ns/30ns
Switching Energy	190μJ (on), 100μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	4V
Fall Time-Max (tf)	120ns
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free