IRGS4607DTRLPBF Description

The IRGS4607DTRLPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. A three-terminal power semiconductor called an insulated-gate bipolar transistor (IGBT) is largely employed as an electronic switch. As IGBT technology advanced, it became possible to combine high efficiency with quick switching. The metal-oxide-semiconductor (MOS) gate structure governs its four alternating layers (P-N-P-N).

IRGS4607DTRLPBF Features

• Maximum Junction Temperature 175°C

• Positive VCE (ON) Temperature Coefficient

• Square RBSOA

• Low VCE(ON) and Switching Losses

• 5μs Short Circuit SOA

IRGS4607DTRLPBF Applications

• Solar Inverters

• Welding

• Industrial Motor Drive

• UPS